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CYStech Electronics Corp.
Silicon PNP Epitaxial Planar Transistor
Spec. No. : C854E3 Issued Date : 2004.07.28
Revised Date : Page No. : 1/4
BTB1236AE3
Description
* High BVCEO * High current capability
Symbol
BTB1236AE3
Outline
TO-220AB
BBase CCollector EEmitter
BCE
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @TA=25 Power Dissipation @TC=25 Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd Tj Tstg Limits -180 -160 -5 -1.5 -3 2 20 150 -55~+150 Unit V V V A A W W C C
BTB1236AE3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on) hFE1 hFE2 fT Cob Min. -180 -160 -5 60 30 Typ. 140 27 Max. -1 -1 -0.6 -1.5 200 Unit V V V A A V V MHz pF
Spec. No. : C854E3 Issued Date : 2004.07.28
Revised Date : Page No. : 2/4
Test Conditions IC=-50A, IE=0 IC=-1mA, IB=0 IE=-50A, IC=0 VCB=-160V, IE=0 VEB=-4V, IC=0 IC=-1A, IB=-100mA VCE=-5V, IC=-150mA VCE=-5V, IC=-100mA VCE=-5V, IC=-500mA VCE=-5V, IC=-150mA VCB=-10V, IE=0, f=1MHz
*Pulse Test: Pulse Width 380s, Duty Cycle2%
Classification of hFE 1
Rank Range K 60~120 P 82~190 Q 120~200
BTB1236AE3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
VCE=5V
Spec. No. : C854E3 Issued Date : 2004.07.28
Revised Date : Page No. : 3/4
Saturation Voltage vs Collector Current
1000
VCE(SAT)@IC=10IB
100
Saturation Voltage-(mV) 1 10 100 1000 10000
Current Gain---HFE
100
10
1 Collector Current---IC(mA)
10 1 10 100 1000 Collector Current---IC(mA) 10000
On Voltage vs Collector Current
10000 Power Dissipation---PD(W)
VBE(ON)@VCE=5V 2.5 2 1.5 1 0.5 0
Power Derating Curve
On Voltage---(mV)
1000
100 1 10 100 1000 10000 Collector Current---IC(mA)
0
50
100
150
200
Ambient Temperature---TA()
Power Derating Curve
25 Power Dissipation---PD(W) 20 15 10 5 0 0 50 100 150 200 Case Temperature---TC()
BTB1236AE3
CYStek Product Specification
CYStech Electronics Corp.
TO-220AB Dimension
Marking:
E C
Spec. No. : C854E3 Issued Date : 2004.07.28
Revised Date : Page No. : 4/4
A D
B
B1236A
H I G 4 P M 3 2 1 N
Style: Pin 1.Base 2.Collector 3.Emitter 4.Collector
K
O
3-Lead TO-220AB Plastic Package CYStek Package Code: E3
*: Typical
DIM A B C D E G H
Inches Min. Max. 0.2197 0.2949 0.3299 0.3504 0.1732 0.185 0.0453 0.0547 0.0138 0.0236 0.3803 0.4047 *0.6398
Millimeters Min. Max. 5.58 7.49 8.38 8.90 4.40 4.70 1.15 1.39 0.35 0.60 9.66 10.28 *16.25
DIM I K M N O P
Inches Min. Max. *0.1508 0.0295 0.0374 0.0449 0.0551 *0.1000 0.5000 0.5618 0.5701 0.6248
Millimeters Min. Max. *3.83 0.75 0.95 1.14 1.40 *2.54 12.70 14.27 14.48 15.87
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTB1236AE3
CYStek Product Specification

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